Effectiveness of self-generation during learning is dependent on individual differences in need for cognition

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Effectiveness of self-generation during learning is dependent on individual differences in need for cognition. / Schindler, Julia; Schindler, Simon; Reinhard, Marc André.
In: Frontline Learning Research, Vol. 7, No. 2, 07.05.2019, p. 23-39.

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@article{015086435ecd41248158881c0de257a0,
title = "Effectiveness of self-generation during learning is dependent on individual differences in need for cognition",
abstract = "Self-generated information is better recognized and recalled than read information. This so-called generation effect has been replicated several times for different types of stimulus material, different generation tasks, and retention intervals. The present study investigated the impact of individual differences in learners{\textquoteright} disposition to engage in effortful cognitive activities (need for cognition, NFC) on the effectiveness of self-generation during learning. Learners low in NFC usually avoid getting engaged in cognitively demanding activities. However, if these learners are explicitly instructed to use elaborate learning strategies such as self-generation, they should benefit more from such strategies than learners high in NFC, because self-generation stimulates cognitive processes that learners low in NFC usually tend not to engage in spontaneously. Using a classical word-generation paradigm, we not only replicated the generation effect in free and cued recall but showed that the magnitude of the generation effect increased with decreasing NFC in cued recall. Results are consistent with our assumption that learners higher in NFC engage in elaborate processing even without explicit instruction, whereas learners lower in NFC usually avoid cognitively demanding activities. These learners need cognitively demanding tasks that require them to switch from shallow to elaborate processing to improve learning. We conclude that self-generation is beneficial regardless of the NFC level, but our study extends the existing literature on the generation effect and on NFC by showing that self-generation can be particularly useful for balancing the learning disadvantage of students lower in NFC.",
keywords = "Desirable difficulties, Generation effect, Incidental learning, Intentional learning, Need for cognition, Psychology",
author = "Julia Schindler and Simon Schindler and Reinhard, {Marc Andr{\'e}}",
note = "Funding Information: The research presented in this article was supported by the Federal State of Hessen and its LOEWE research initiative Desirable Difficulties in Learning (LOEWE: Landes-Offensive zur Entwicklung wissenschaftlich-{\"o}konomischer Exzellenz [state offensive for the development of scientific and economic excellence]). We would like to thank our student assistants for assisting in data collection and coding. Researchers who are interested in the stimulus material are invited to send an e-mail to the first or the second author. Publisher Copyright: {\textcopyright} 2019, European Association for Research on Learning and Instruction. All rights reserved.",
year = "2019",
month = may,
day = "7",
doi = "10.14786/FLR.V7I2.407",
language = "English",
volume = "7",
pages = "23--39",
journal = "Frontline Learning Research",
issn = "2295-3159",
publisher = "European Association for Research on Learning and Instruction",
number = "2",

}

RIS

TY - JOUR

T1 - Effectiveness of self-generation during learning is dependent on individual differences in need for cognition

AU - Schindler, Julia

AU - Schindler, Simon

AU - Reinhard, Marc André

N1 - Funding Information: The research presented in this article was supported by the Federal State of Hessen and its LOEWE research initiative Desirable Difficulties in Learning (LOEWE: Landes-Offensive zur Entwicklung wissenschaftlich-ökonomischer Exzellenz [state offensive for the development of scientific and economic excellence]). We would like to thank our student assistants for assisting in data collection and coding. Researchers who are interested in the stimulus material are invited to send an e-mail to the first or the second author. Publisher Copyright: © 2019, European Association for Research on Learning and Instruction. All rights reserved.

PY - 2019/5/7

Y1 - 2019/5/7

N2 - Self-generated information is better recognized and recalled than read information. This so-called generation effect has been replicated several times for different types of stimulus material, different generation tasks, and retention intervals. The present study investigated the impact of individual differences in learners’ disposition to engage in effortful cognitive activities (need for cognition, NFC) on the effectiveness of self-generation during learning. Learners low in NFC usually avoid getting engaged in cognitively demanding activities. However, if these learners are explicitly instructed to use elaborate learning strategies such as self-generation, they should benefit more from such strategies than learners high in NFC, because self-generation stimulates cognitive processes that learners low in NFC usually tend not to engage in spontaneously. Using a classical word-generation paradigm, we not only replicated the generation effect in free and cued recall but showed that the magnitude of the generation effect increased with decreasing NFC in cued recall. Results are consistent with our assumption that learners higher in NFC engage in elaborate processing even without explicit instruction, whereas learners lower in NFC usually avoid cognitively demanding activities. These learners need cognitively demanding tasks that require them to switch from shallow to elaborate processing to improve learning. We conclude that self-generation is beneficial regardless of the NFC level, but our study extends the existing literature on the generation effect and on NFC by showing that self-generation can be particularly useful for balancing the learning disadvantage of students lower in NFC.

AB - Self-generated information is better recognized and recalled than read information. This so-called generation effect has been replicated several times for different types of stimulus material, different generation tasks, and retention intervals. The present study investigated the impact of individual differences in learners’ disposition to engage in effortful cognitive activities (need for cognition, NFC) on the effectiveness of self-generation during learning. Learners low in NFC usually avoid getting engaged in cognitively demanding activities. However, if these learners are explicitly instructed to use elaborate learning strategies such as self-generation, they should benefit more from such strategies than learners high in NFC, because self-generation stimulates cognitive processes that learners low in NFC usually tend not to engage in spontaneously. Using a classical word-generation paradigm, we not only replicated the generation effect in free and cued recall but showed that the magnitude of the generation effect increased with decreasing NFC in cued recall. Results are consistent with our assumption that learners higher in NFC engage in elaborate processing even without explicit instruction, whereas learners lower in NFC usually avoid cognitively demanding activities. These learners need cognitively demanding tasks that require them to switch from shallow to elaborate processing to improve learning. We conclude that self-generation is beneficial regardless of the NFC level, but our study extends the existing literature on the generation effect and on NFC by showing that self-generation can be particularly useful for balancing the learning disadvantage of students lower in NFC.

KW - Desirable difficulties

KW - Generation effect

KW - Incidental learning

KW - Intentional learning

KW - Need for cognition

KW - Psychology

UR - http://www.scopus.com/inward/record.url?scp=85071902946&partnerID=8YFLogxK

U2 - 10.14786/FLR.V7I2.407

DO - 10.14786/FLR.V7I2.407

M3 - Journal articles

AN - SCOPUS:85071902946

VL - 7

SP - 23

EP - 39

JO - Frontline Learning Research

JF - Frontline Learning Research

SN - 2295-3159

IS - 2

ER -

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